850nm Si ACUS modules

Exemplar: GD4213Y/ GD4251Y/ GD4251Y-A/ GD42121Y

Description:

850nm Si PIN photodiode modulus est cum ambitu praeamplificationis, qui dat signum debile currentis ampliandi et convertendi ad signum voltagendi ad processum conversionis amplificationis photon-photoelectric-signi consequendae.

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Technical Parameter

Product Tags

Features

Summus celeritas responsionis
Summus sensus

Applications

Laser fuse

Photoelectric parameter（@Ta=22±3℃）

Item #	Sarcina genus	Diameter superficiei photosensitivae (mm)	Responsivity	Resurgens tempus (ns)	Dynamic range dB）	Operans voltage (V)	sonitus voltage (mV)	Notae
Item #	Sarcina genus	Diameter superficiei photosensitivae (mm)	λ=850nm，φ_e=1μW		λ=850nm	Operans voltage (V)	sonitus voltage (mV)	Notae
GD4213Y	TO-8	2	110	12	20	±5±0.3	12	-
GD4251Y		2	130	12	20	±6±0.3	40	(Angulus incidentiae: 0°, transmissio 830nm~ 910nm ≥90%
GD4251Y-A		10×1.5	130	18	20	±6±0.3	40
GD42121Y		10×0.95	110	20	20	±5±0.1	25
Notae: Onus testium GD4213Y est 50Ω，, ceterae 1MΩ . sunt