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850nmPIN series OMNIBUS

850nmPIN series OMNIBUS

Exemplar: GD4213Y / GD4251Y / GD4251Y-A / GD42121Y

Description:

Silicon PIN photodiode moduli fabrica est cum in ambitu praeambulante aedificato, quod signum debile amplificare potest et in intentione signum output convertere, processus conversionis "optical-electrici-signi amplificationis" animadvertens.


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Technical Parameter

FEATURES

APPLICANDIS

Product Tags

Notae photoelectric (@Ta=22±3)

Model

GD4213Y

GD4251Y

GD4251Y-A

GD42121Y

Forma sarcina

TO-8

TO-8

TO-8

TO-8

Photosensitive superficiei magnitudine (mm)

2

2

10×1.5

10×0.95

Voltage (V)

±5±0.3

±6±0.3

±6±0.3

±5±0.1

Vox voltage (mV)

12

40

40

25

Curae (M/AY)

λ=850nm, φ=1μW

110

130

130

110

Surge tempus.

12

12

18

20

Dynamic range (dB) λ=850nm

20

20

20

20

Animadverte

Fenestra levis inaurata est cum tabellario taeniolarum colum cinematographicarum (0 gradus incidentiae, 830nm~910nm transmissionis ≥ 90%), probatio oneris GD4213Y est 50Ω, et probatio oneris aliorum productorum est 1MΩ.

Velox responsio

Summus sensus

Laser fuze


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  • Velox responsio

    Summus sensus

    Laser fuze