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InGaAs APD Modules

InGaAs APD Modules

Exemplar: GD6510Y/ GD6511Y/ GD6512Y

Description:

Est indium gallium arsenide avalanche photodiodae moduli cum ambitu praeamplificationis, qui dat signum debile currenti amplificandi et in signum voltage convertendi ad processum conversionis amplificationis photon-photoelectric-signi consequendae.


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Product Detail

Product Tags

Features

  • Frontside illustratur plana chip
  • Summus celeritas responsionis
  • Summus sensus detector

Applications

  • Laser ranging
  • Communicatio laser
  • Monitum laser

Photoelectric parametri.@Ta=22±3℃.

Item #

 

 

Sarcina genus

 

 

Diameter superficiei photosensitivae (mm)

 

 

Spermatophyta responsio range

(um)

 

 

Naufragii voltage

V)

Responsivity

M=10

λ=1550nm

(kV/W)

 

 

 

 

Resurgens tempus

ns

Bandwidth

(MHz)

Temperature Coefficient

Ta=-40℃~85℃

V/℃)

 

Vox equivalentis potentiae (pW/√Hz)

 

Concentricitas(μm)

Genus substitutum in aliis regionibus

GD6510Y

 

 

TO-8

 

0.2

 

 

1000~1700

30~70

340

5

70

0.12

0.15

≤50

C3059-1550-R2A

GD6511Y

0.5

10

35

0.21

GD6512Y

0.08

2.3

150

0.11

C3059-1550-R08B


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