InGaAS-APD series moduli

Exemplar: GD6510Y / GD6511Y / GD6512Y

Description:

Cogitatus est InGaAs avalanche photodiodae moduli cum in circuitu praeambulo aedificato, qui infirma converti potest.Post amplificatur signum praesens, in intentione signum convertitur ad amplificationem "optical-electrical-signum" conversionis processus.

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Technical Parameter

FEATURES

APPLICANDIS

Product Tags

Notae photoelectric (＠Ta＝22±3℃)
Model	GD6510Y	GD6511Y	GD6512Y
Forma sarcina	TO-8	TO-8	TO-8
Diameter superficies Photosensitiva (mm)	0.2	0.5	0.08
Responsio spectris range (um)	1000~1700	1000~1700	1000~1700
Naufragii voltage (V)	30~70	30~70	30~70
Responsivity M=10 l=1550nm(kV/W)	340	340	340
Surge tempus.	5	10	2.3
Sed (MHz)	70	35	150
Equivalent sonitus potentiae (pW/√Hz)	0.15	0.21	0.11
T=-40℃~85℃(V/℃)	0.12	0.12	0.12
Concentricitas (μm)	≤50	≤50	≤50
Exemplaria alternativa eiusdem effectus in mundo	C3059-1550-R2A	/	C3059-1550-R08B

Ante Planum Chip Structure

Velox responsio

Princeps detector sensus

Laser ranging

Lidar

Monitum laser